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Silicon Carbide. Current Trends in Research and ApplicationsLEY, Lothar; PENSL, Gerhard.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, issn 0370-1972, 230 p.Serial Issue

Silicon carbide power-device Products -Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applicationsFRIEDRICHS, P.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1232-1238, issn 0370-1972, 7 p.Article

Electrochemical surface transfer doping: The mechanism behind the surface conductivity of hydrogen-terminated diamondRISTEIN, Jürgen; RIEDEL, Marc; LEY, Lothar et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 10, pp E315-E321, issn 0013-4651Article

Study of space-charge-limited currents in high-voltage TFTs based on a-Si:HPOPESCU, Benedict; HUNDHAUSEN, Martin; LEY, Lothar et al.Journal of non-crystalline solids. 2001, Vol 283, Num 1-3, pp 155-161, issn 0022-3093Article

Amorphous semiconductors-science and technology. I: [selected papers], Garmish-Partenkirchen, Federal Republic of Germany, August 19-23, 1991BAUER, Gottfried Heinrich; FUMS, Walther; LEY, Lothar et al.Journal of non-crystalline solids. 1991, Vol 137-38, issn 0022-3093, 710 p., 1Conference Proceedings

Present status and future prospects for electronics in electric vehicles/hybrid electric vehicles and expectations for wide-bandgap semiconductor devicesHAMADA, Kimimori.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1223-1231, issn 0370-1972, 9 p.Article

Optical properties of as-grown and process-induced stacking faults in 4H-SiCCAMASSEL, J; JUILLAGUET, S.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1337-1355, issn 0370-1972, 19 p.Article

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Density functional study of graphene overlayers on SiCMATTAUSCH, Alexander; PANKRATOV, Oleg.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1425-1435, issn 0370-1972, 11 p.Article

Amorphous semiconductors science and technology. II, [selected papers], Garnish-Partenkirehen, Federal Republic of Germany, August 19-23, 1991BAUER, GOTTFRIED HEINRICH; LEY, LOTHAR; FUHS, WALTHER et al.Journal of non-crystalline solids. 1991, Vol 137-38, issn 0022-3093, 2Conference Proceedings

Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiationKIMOTO, Tsunenobu; DANNO, Katsunori; SUDA, Jun et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1327-1336, issn 0370-1972, 10 p.Article

Defect pool model of defect formation in a-Si:HWINER, K.Journal of non-crystalline solids. 1991, Vol 137-38, pp 157-162, issn 0022-3093, 1Conference Paper

Unification of geminate and distant pair recombination statistics : low temperature photoelectronic properties in a-Si:HRISTEIN, J.Journal of non-crystalline solids. 1991, Vol 137-38, pp 563-566, issn 0022-3093, 1Conference Paper

Hydrogen in crystalline and amorphous siliconJOHNSON, N. M.Journal of non-crystalline solids. 1991, Vol 137-38, pp 11-16, issn 0022-3093, 1Conference Paper

Photo-induced metastability in amorphous semiconductorsTANAKA, K.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1-10, issn 0022-3093, 1Conference Paper

Transport in a-Si:HNEBEL, C. E.Journal of non-crystalline solids. 1991, Vol 137-38, pp 395-400, issn 0022-3093, 1Conference Paper

Micro-and nanomechanical structures for silicon carbide MEMS and NEMSZORMAN, Christian A; PARRO, Rocco J.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1404-1424, issn 0370-1972, 21 p.Article

Ordered arrangement of 9-aminoanthracene on Au(111) surfaces : A scanning tunneling microscopy studyLAUFFER, Peter; GRAUPNER, Ralf; JUNG, Adrian et al.Surface science. 2007, Vol 601, Num 23, pp 5533-5539, issn 0039-6028, 7 p.Article

Defects, tight binding, and AB initio molecular dynamics simulations on a-SiFEDDERS, P. A.Journal of non-crystalline solids. 1991, Vol 137-38, pp 141-144, issn 0022-3093, 1Conference Paper

Dual beam modulated photoconductivity : a kinetic analysisGAUTHIER, M.Journal of non-crystalline solids. 1991, Vol 137-38, pp 611-614, issn 0022-3093, 1Conference Paper

Properties of free-carrier transport in a-Se and a-Si:HJUSKA, G.Journal of non-crystalline solids. 1991, Vol 137-38, pp 401-406, issn 0022-3093, 1Conference Paper

Thermalization in a system with a continuous spectrum of statesTARASKIN, S.Journal of non-crystalline solids. 1991, Vol 137-38, pp 25-28, issn 0022-3093, 1Conference Paper

Recombination of electron-hole pairs at low temperaturesSEARLE, T. M.Journal of non-crystalline solids. 1991, Vol 137-38, pp 571-574, issn 0022-3093, 1Conference Paper

Simulated time-of-flight experiments across abrupt and graded shifts in a band edgeSHAPIRO, F. R.Journal of non-crystalline solids. 1991, Vol 137-38, pp 451-454, issn 0022-3093, 1Conference Paper